Summary
Everyday electronic devices suffer from power-loss issues originating from leakage currents in the stand-by (OFF) mode, which dominate even more with miniaturization of transistors. The concept of negative capacitance on ferroelectric (FE) materials, and consequently ferroelectric field-effect transistor (FEFET) provides a materials solution to achieve sharp-switching in FETs, and promises to be a breakthrough solution to reduce this OFF state leakage. The recent demonstrations of ferroelectricity in thin (
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More information & hyperlinks
| Web resources: | https://cordis.europa.eu/project/id/794954 |
| Start date: | 01-05-2018 |
| End date: | 30-04-2020 |
| Total budget - Public funding: | 165 598,80 Euro - 165 598,00 Euro |
Cordis data
Original description
Everyday electronic devices suffer from power-loss issues originating from leakage currents in the stand-by (OFF) mode, which dominate even more with miniaturization of transistors. The concept of negative capacitance on ferroelectric (FE) materials, and consequently ferroelectric field-effect transistor (FEFET) provides a materials solution to achieve sharp-switching in FETs, and promises to be a breakthrough solution to reduce this OFF state leakage. The recent demonstrations of ferroelectricity in thin (Status
CLOSEDCall topic
MSCA-IF-2017Update Date
28-04-2024
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