Summary
As the device size is shrunk to its quantum limit, Moore’s law is becoming more difficult to follow. By exploiting the z-direction in the gate, block or system level, three-dimensional (3D) integrated circuit (IC) technology has the potential to extend Moore’s law. Face-to-face wafer by wafer Hybrid-bonding (H-b) based 3D System-On-Chip (H-3D-SOC) is one of the most promising 3D IC solutions. However, an exclusive IC design flow for H-3D-SOC for high-end processor with parameters of H-b pads from process is not available yet. This proposal aims at developing the first H-3D-SOC IC design flow for a two-tier multi-core processor considering the impact of process variation of H-b, including the geometrical and defects variation, leading to its resistance and capacitance change. Several novel methods will be developed for the H-3D-SOC IC design: machine-learning inspired techniques exploited to guide the top and bottom tiers netlist partitioning; two-tier mutual-aware optimization realized during placement and routing; capacitance coupling between the top metal layers of the two tiers considered during parasitic extraction. Moreover, impact of H-b pad parameter variation will be evaluated from the device level up to the system level: electrical variability modelling for the H-b pad, calibrated by experimental data; incorporating the device model of the pad into the H-3D-SOC based multi-core processor characterized by various industrial benchmarks. To mitigate the H-b variability, the critical H-b pads of higher utilization and larger potential to fail during working can be first identified efficiently by using a heuristic search algorithm and then hardened by attaching a spare pad to each of them. The proposed research will enable the applicant to become an expert of 3D IC design of high-end processors for applications such as AI and cloud computing, having great impact on both academia and industry of semiconductor.
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More information & hyperlinks
| Web resources: | https://cordis.europa.eu/project/id/894805 |
| Start date: | 01-04-2020 |
| End date: | 31-03-2022 |
| Total budget - Public funding: | 178 320,00 Euro - 178 320,00 Euro |
Cordis data
Original description
As the device size is shrunk to its quantum limit, Moore’s law is becoming more difficult to follow. By exploiting the z-direction in the gate, block or system level, three-dimensional (3D) integrated circuit (IC) technology has the potential to extend Moore’s law. Face-to-face wafer by wafer Hybrid-bonding (H-b) based 3D System-On-Chip (H-3D-SOC) is one of the most promising 3D IC solutions. However, an exclusive IC design flow for H-3D-SOC for high-end processor with parameters of H-b pads from process is not available yet. This proposal aims at developing the first H-3D-SOC IC design flow for a two-tier multi-core processor considering the impact of process variation of H-b, including the geometrical and defects variation, leading to its resistance and capacitance change. Several novel methods will be developed for the H-3D-SOC IC design: machine-learning inspired techniques exploited to guide the top and bottom tiers netlist partitioning; two-tier mutual-aware optimization realized during placement and routing; capacitance coupling between the top metal layers of the two tiers considered during parasitic extraction. Moreover, impact of H-b pad parameter variation will be evaluated from the device level up to the system level: electrical variability modelling for the H-b pad, calibrated by experimental data; incorporating the device model of the pad into the H-3D-SOC based multi-core processor characterized by various industrial benchmarks. To mitigate the H-b variability, the critical H-b pads of higher utilization and larger potential to fail during working can be first identified efficiently by using a heuristic search algorithm and then hardened by attaching a spare pad to each of them. The proposed research will enable the applicant to become an expert of 3D IC design of high-end processors for applications such as AI and cloud computing, having great impact on both academia and industry of semiconductor.Status
CLOSEDCall topic
MSCA-IF-2019Update Date
28-04-2024
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