A novel silicon heterojunction IBC process flow using partial etching of doped a‐Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%

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Authors: Hariharsudan Sivaramakrishnan Radhakrishnan, M.D. Gius Uddin, Menglei Xu, Jinyoun Cho, Moustafa Ghannam, Ivan Gordon, Jozef Szlufcik, Jef Poortmans

Journal title: Progress in Photovoltaics: Research and Applications

Journal number: 27/11

Journal publisher: John Wiley & Sons Inc.

Published year: 2018

Published pages: 959-970

DOI identifier: 10.1002/pip.3101

ISSN: 1062-7995