IBC devices employing a-Si:H and c-Si:H based contact stacks with Voc>740 mV and FF>82%

The aim of this deliverable is the achievement of high-efficiency solar cell devices employing novel a-Si:H and uc-Si:H based contact stacks, which are developed in task T4.1. The devices will be characterized by 1-sun I-V measurements and the success, or failure, of this deliverable will be determined by the measured electrical parameters.