Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC- MOSFETs with embedded SBD and intrinsic body diode

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Authors: Hithiksha Krishna Murthy, Jang-Kwon Lim, Mietek Bakowski

Journal publisher: RISE Research Institutes of Sweden AB, Kista, Sweden @ ICSCRM2023, to be published in Materials Science Forum

Published year: 2024