Measurement and analysis of body diode stress of 3.3 kV SiC-MOSFETs with intrinsic body diode and embedded SBD

Summary

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Authors: Geon-Hee Lee1,*, Jang-kwon Lim2, Sang-Mo Koo1, Mietek Bakowski

Journal publisher: ICSCRM2022, published in Materials Science Forum, Volume 1091

Published year: 2023

Published pages: pp.55-59