Robustly protected carrier spin relaxation in electrostatically doped transition-metal dichalcogenides

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Authors: Y. J. Zhang, W. Shi, J. T. Ye, R. Suzuki, Y. Iwasa

Journal title: Physical Review B

Journal number: 95/20

Journal publisher: American Physical Society

Published year: 2017

DOI identifier: 10.1103/physrevb.95.205302

ISSN: 2469-9950