Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

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Authors: Marko Simicic, Nowab Reza Ashif, Geert Hellings, Shih-Hung Chen, Manoj Nag, Auke Jisk Kronemeijer, Kris Myny, Dimitri Linten

Journal title: Microelectronics Reliability

Journal number: 108

Journal publisher: Elsevier BV

Published year: 2020

Published pages: 113632

DOI identifier: 10.1016/j.microrel.2020.113632

ISSN: 0026-2714