First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: K. Cai, G Talmelli, K Fan, S Van Beek, V Kateel, M Gupta, MG Monteiro, M Ben Chroud, G Jayakumar, A Trovato, S Rao, GS Kar, S Couet

Journal title: 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022

Journal publisher: IEEE

Published year: 2022

DOI identifier: 10.1109/iedm45625.2022.10019360