Correction to “Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors With Flat Responsivity Up to 2.2 THz” [Sep 18 1413-1416]

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Authors: Kestutis Ikamas, Dovile Cibiraite, Alvydas Lisauskas, Maris Bauer, Viktor Krozer, Hartmut G. Roskos

Journal title: IEEE Electron Device Letters

Journal number: 40/2

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 354-354

DOI identifier: 10.1109/LED.2018.2889431

ISSN: 0741-3106