1 eV Ga(NAsSb) grown by MOVPE using di- tertiary -butyl-arsano-amine (DTBAA)

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Authors: E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, K. Volz

Journal title: AIP Advances

Journal number: 8/5

Journal publisher: American Institute of Physics Inc.

Published year: 2018

Published pages: 055329

DOI identifier: 10.1063/1.5034083

ISSN: 2158-3226