High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

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Authors: G. X. Liu, A. Liu, F. K. Shan, Y. Meng, B. C. Shin, E. Fortunato, R. Martins

Journal title: Applied Physics Letters

Journal number: 00036951

Journal publisher: American Institute of Physics

Published year: 2014

Published pages: 113509

DOI identifier: 10.1063/1.4895782

ISSN: 0003-6951