A water-induced high-k yttrium oxide dielectric for fully-solution-processed oxide thin-film transistors

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Authors: Ao Liu, Guoxia Liu, Huihui Zhu, You Meng, Huijun Song, Byoungchul Shin, Elvira Fortunato, Rodrigo Martins, Fukai Shan

Journal title: Current Applied Physics

Journal number: 15671739

Journal publisher: Elsevier BV

Published year: 2015

Published pages: S75-S81

DOI identifier: 10.1016/j.cap.2015.04.015

ISSN: 1567-1739