Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress

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Authors: Asal Kiazadeh, Daniela Salgueiro, Rita Branquinho, Joana Pinto, Henrique L. Gomes, Pedro Barquinha, Rodrigo Martins, Elvira Fortunato

Journal title: APL Materials

Journal number: 2166532X

Journal publisher: American Institute of Physics

Published year: 2015

Published pages: 062804

DOI identifier: 10.1063/1.4919057

ISSN: 2166-532X