Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

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Authors: Zaoyang Lin, Xiangyu Wu, Daire Cott, Yuanyuan Shi, Henry Medina Silva, Stefanie Sergeant, Thierry Conard, Johan Meersschaut, Ankit Nalin Mehta, Benjamin Groven, Pierre Morin, Inge Asselberghs, Cesar Javier Lockhart de la Rosa, Gouri Sankar Kar, Dennis Lin, Annelies Delabie

Journal title: ACS Applied Electronic Materials

Journal number: 6

Journal publisher: American Chemical Society

Published year: 2024

Published pages: 4213-4222

DOI identifier: 10.1021/acsaelm.4c00309

ISSN: 2637-6113