"Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS<mml:math xmlns:mml=""http://www.w3.org/1998/Math/MathML"" altimg=""si12.svg"" display=""inline"" id=""d1e247""><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> monolayers on sapphire substrates"

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Authors: Y. Rybalchenko, A. Minj, H. Medina, R. Villarreal, B. Groven, D. Lin, L.M.C. Pereira, P. Morin, T. Hantschel, V.V. Afanas’ev

Journal title: Solid-State Electronics

Journal number: 209

Journal publisher: Pergamon Press Ltd.

Published year: 2024

Published pages: 108781

DOI identifier: 10.1016/j.sse.2023.108781

ISSN: 0038-1101