Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

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Authors: Yu. Yu. Illarionov, A. Karl, Q. Smets, B. Kaczer, T. Knobloch, L. Panarella, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser

Journal title: npj 2D Materials and Applications

Journal number: 8

Journal publisher: Nature Portfolio

Published year: 2024

DOI identifier: 10.1038/s41699-024-00445-0

ISSN: 2397-7132