Formation of a lateral p–n junction light-emitting diode on an n-type high-mobility GaAs/Al_0.33Ga_0.67As heterostructure

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Authors: C P Dobney, A Nasir, P See, C J B Ford, J P Griffiths, C Chen, D A Ritchie, M Kataoka

Journal title: Semiconductor Science and Technology

Journal number: 38

Journal publisher: Institute of Physics Publishing

Published year: 2023

Published pages: 065001

DOI identifier: 10.1088/1361-6641/acca40

ISSN: 0268-1242