Enhanced 2DEG confinement in GaN-based HEMTs: Exploring the role of AlGaN back barriers through Schrödinger - Poisson simulations and experimental validation

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Authors: Athanasios Kostopoulos, Adam Adikimenakis, Katerina Tsagaraki, Maria Kayambaki, Nikolaos Kornilios, George Konstantinidis, Alexandros Georgakilas

Journal title: Materials Science in Semiconductor Processing

Journal number: 188

Journal publisher: Elsevier BV

Published year: 2025

DOI identifier: 10.1016/j.mssp.2024.109213

ISSN: 1369-8001