CMOS Compatible 200 mm GaN-on-Si HEMTs for RF Switch Applications with 36 dBm CW Power Handling and 200 FS RonCoff

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Authors: L. Lucci, I. Charlet, Y. Gobil, F. Morisot, J. Delprato, S. Ruel, C. Benotmane, F. Laulagnet, P. Dezest, R. Bon, T. Bordignon, A. Clemente, A. Kumar, A. Anotta, T. Billon, B. Duriez, E. Morvan

Journal title: 2024 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2025

DOI identifier: 10.1109/IEDM50854.2024.10872999